TSMC's Industry-first and Leading 7nm Technology Enters Volume Production
TSMC's industry-first and leading 7nm Fin Field-Effect Transistor (FinFET) process technology entered volume production in the second quarter of 2018. 7nm is TSMC's fourth generation process node that uses 3D FinFET transistor technology, a further demonstration of TSMC's continued innovation that leads the semiconductor industry's technology development.
7nm Provides the Industry's Most Competitive Speed, Power Reduction, and Logic Density
Compared to TSMC's 16nm FinFET Plus (16FF+) technology, TSMC's 7nm technology delivers around 35% speed gain at the same power, or around 65% power reduction at the same speed. In addition, this technology improves logic density by more than three times.
7nm Supports a Diverse Set of Product Applications and Enjoys Strong Customer Adoption
TSMC set another industry record by launching two separate 7nm FinFET tracks: one optimized for mobile applications, the other for high performance computing applications. TSMC's 7nm technology supports customers for various product applications, covering mobile, artificial intelligence, server CPU, GPU, cryptocurrency, network processor, FPGA, gaming, and automotive.
We have already taped out more than 10 customer products at 7nm in 2017and a total of more than 50 customer product tape-outs are expected by the end of 2018.
7nm FinFET Supports Various Customer Product Applications
7nm FinFET Plus Technology Risk Production Starts Soon
Following the volume production of 7nm FinFET technology, TSMC's 7nm FinFET Plus technology is expected to start risk production in the third quarter of 2018. This technology will use several extreme ultraviolet (EUV) masks, which can further enable more competitive speed, power reduction, and logic density.